elektronische bauelemente 2sd2136 3a , 60v npn plastic encapsulated transistor 03-dec-2013 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 3 base 1 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features low frequency power amplifier low collector-emitter saturation voltage vce(sat) high forward current transfer ratio hfe which has satisfactory linearity. classification of h fe (1) product-rank 2sd2136-p 2SD2136-Q 2sd2136-r range 40~90 70~150 120~250 absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 60 v collector to emitter voltage v ceo 60 v emitter to base voltage v ebo 6 v collector current - continuous i c 3 a collector power dissipation p c 1.25 w thermal resistance from junction to ambient r ja 100 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo 60 - - v i c =0.1ma, i e =0 collector to emitter breakdown voltage 1 v (br)ceo 60 - - v i c =30ma, i b =0 emitter to base breakdown voltage v (br)ebo 6 - - v i e =0.1ma, i c =0 collector cut C off current i cbo - - 200 a v cb =60v, i e =0 collector cut C off current i ceo - - 300 a v ce =60v, i b =0 emitter cut C off current i ebo - - 1 ma v eb =6v, i c =0 h fe (1) 40 - 250 v ce =4v, i c =1a dc current gain 1 h fe (2) 10 - - v ce =4v, i c =3a collector to emitter saturation voltage 1 v ce(sat) - - 1.2 v i c =3a, i b =375ma collector output capacitance 1 v be - - 1.8 v v ce =4v, i c =3a transition frequency f t - 30 - mhz v ce =5v, i c =100ma, f=10mhz note: 1. pulse test: pulse width 300 s, duty cycle 2.0%. 1 11 1 emitter 2 22 2 collector 3 33 3 base to-126 c d b a e n f l g k j h m millimeter millimeter ref. min. max. ref. min. max. a 7.40 7.80 h 1.10 1.50 b 2.50 2.90 j 0.45 0.60 c 10.60 11.00 k 0.66 0.86 d 15.30 15.70 l 2.10 2.30 e 3.70 3.90 m 1.17 1.37 f 3.90 4.10 n 3.00 3.20 g 2.29 typ.
elektronische bauelemente 2sd2136 3a , 60v npn plastic encapsulated transistor 03-dec-2013 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. ratings and characteristic curves
|
